| PART |
Description |
Maker |
| HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| HYM536400B |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM536410 |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM536A814A |
8M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM536810 |
8M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM536410B |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM328000GD-60 HYM328000GD- 328000 HYM328000GD-50 |
-8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
8M x 32 Bit DRAM Module (SO-DIMM)
From old datasheet system
8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 8M X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
|
Analog Devices, Inc.
TOKO, Inc.
Altera, Corp.
|
| HYM321000GS-60 HYM321000S-50 HYM321000GS-50 HYM321 |
1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module 1M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72
1M x 32 Bit DRAM Module
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HYM72V8025GS-60 HYM72V8025GS-50 HYM72V8035GS-60 HY |
8M x 72 Bit ECC EDO DRAM Module buffered
8M x 72-Bit EDO- DRAM Module (ECC - Module)
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
